BLF6G22LS-100,112 datasheet by NXP Semiconductors

Description Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 29 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 18.5 dB; Package: SOT502B (LDMOST); Container: Blister pack
Datasheet Type Original
RoHS Yes
Pb Free Unknown
Lifecycle Transferred
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BLF6G22LS-100 BLF6G22LS-100,118

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